دیتاشیت MMBT5551

MMBT5551

مشخصات دیتاشیت

نام دیتاشیت MMBT5551
حجم فایل 89.752 کیلوبایت
نوع فایل pdf
تعداد صفحات 4

دانلود دیتاشیت MMBT5551

MMBT5551 Datasheet

مشخصات

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: WPMtek(Wei Pan Microelectronics) MMBT5551
  • Transistor Type: NPN
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 600mA
  • Power Dissipation (Pd): 300mW
  • Transition Frequency (fT): 100MHz
  • DC Current Gain (hFE@Ic,Vce): 100@10mA,5V
  • Collector Cut-Off Current (Icbo): 50nA
  • Collector-Emitter Breakdown Voltage (Vceo): 160V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 200mV@50mA,5mA
  • Package: SOT-23(TO-236)
  • Manufacturer: WPMtek(Wei Pan Microelectronics)
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Obsolete
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 160V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: 100MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
  • Base Part Number: MMBT5551

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