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MMBT5551 Datasheet
Datasheet specifications
| Datasheet's name | MMBT5551 |
|---|---|
| File size | 87.652 KB |
| File type | |
| Number of pages | 3 |
Download Datasheet MMBT5551 |
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Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: Shenzhen Jinkaisheng Elec MMBT5551
- Package: SOT-23(TO-236)
- Manufacturer: Shenzhen Jinkaisheng Elec
- Transistor Type: NPN
- Operating Temperature: -55°C~+150°C@(Tj)
- Collector Current (Ic): 600mA
- Power Dissipation (Pd): 300mW
- Transition Frequency (fT): 100MHz
- DC Current Gain (hFE@Ic,Vce): 100@10mA,5V
- Collector Cut-Off Current (Icbo): 50nA
- Collector-Emitter Breakdown Voltage (Vceo): 160V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 200mV@50mA,5mA
- Series: -
- Packaging: Cut Tape (CT)
- Part Status: Obsolete
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 160V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Power - Max: 350mW
- Frequency - Transition: 100MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
- Base Part Number: MMBT5551